منابع مشابه
Single dopants in semiconductors.
The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance as well as locally on the fundamental ...
متن کاملSingle dopants in semiconductors.
The controlled introduction of dopant atoms to semiconducting host materials is the corner stone of electronic device fabrication. Dopant atoms provide a means to modulate the electronic, optical, and magnetic properties of semiconductors [1], and it is now possible to control dopant profiles with true atomic-scale precision in the laboratory [2]. Moreover, industrial fabrication methods are no...
متن کاملPreferential positioning of dopants and co-dopants in embedded and freestanding Si nanocrystals.
In this work we aim at understanding the effect of n- and p-type substitutional doping in the case of matrix-embedded and freestanding Si nanocrystals. By means of ab initio calculations we identify the preferential positioning of the dopants and its effect on the structural properties with respect to the undoped case. Subsequently, we consider the case of phosphorus and boron co-doped nanocrys...
متن کاملEffect of Dopants on Zirconia Stabilization-An X-ray Absorption Study: I, Trivalent Dopants
Local atomic structures of Zr and dopant cations in zirconia solid solutions with Fe,03, Ga203, Y203, and Gd203 .have been determined. The Zr ions in both partially stabilized tetragonal and fully stabilized cubic zirconia have their own characteristic structures which are dopant-independent. The dopant cations substitute for Zr ions despite severe local distortions necessitated by the large di...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science
سال: 2011
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.334.6063.1605-c